This repository contains the complete design workflow and simulation results of a single-stage Low Noise Amplifier (LNA) targeted at boosting weak RF signals in the 1.8–2.6 GHz band. The design was developed using industry-standard RF design methodologies and simulated using Keysight Advanced Design System (ADS).
The LNA was designed to:
- Amplify low-level RF signals with minimal added noise
- Maintain unconditional stability across the operational band
- Achieve optimal tradeoff between gain, noise figure, and stability
Key Specs:
- Center Frequency: 2.0 GHz
- Achieved Gain: 14.02 dB
- Minimum Noise Figure (NFmin): 0.83 dB
- Stability (Mu > 1): Achieved via custom stabilization network
- Transistor Selection: ATF-21170 GaAs FET (modeled using S-parameters)
- Stability Analysis: Mu and Mu’ factors simulated in ADS
- Biasing: Active biasing network for thermal and electrical stability
- Matching Networks: Lumped-element IMN & OMN designed using Smith Chart
- Simulation Tools: Keysight ADS 2023 with gain & NF circles, load-pull analysis
- S-Parameter Verification — Confirmed ADS model fidelity with datasheet
- Biasing & Stability — Engineered for Vds = 3 V, Ids = 20 mA; achieved unconditional stability
- Impedance Matching — Designed with Smith Chart utility to align Γs & ΓL
- Simulation Passes — 10 iterations optimizing gain, NF, and Mu simultaneously
- Final Result — Stable and high-gain performance verified at 2.0 GHz
- Gonzalez, G. Microwave Transistor Amplifiers: Analysis and Design
- Keysight ADS Documentation
- ATF-21170 Datasheet
- IEEE ICMRSISIT 2019 Conference Paper
For any queries, feel free to reach out:
- Achutha Thyagaraju
- 📧 achuthathyagaraju@gmail.com